| 摘要 |
PURPOSE:To obtain the title high-quality compd. semiconductor crystal with the diameter easily controllable and useful for semiconductor, etc., by pulling up the crystal in a crucible while monitoring the inside of a growth chamber having see-through part kept at a specified temp. from the outside of a high- pressure chamber. CONSTITUTION:The melt 2 of a raw material such as CdTe is charged in the crucible 1 supported by a shaft 4. The growth chamber 5 consisting of the see-through part 5a, a lifting shaft 9, and a receiving part 6 is provided in the crucible 1, and vapor sealing liq. B2O3 is charged in a grooved part 3 and in the receiving part 6. The chamber 5 is then covered with the high-pressure chamber 12 provided with a view rod 13, the see-through part 5a is kept at >=900 deg.C by a main heater 10 and an auxiliary heater 11, and heating is controlled while monitoring the inside by the rod 13. The crystal is pulled up and grown in about 50hr while controlling the Cd vapor pressure in the chamber 5 to about 1atm, the turning rate of the crucible shaft 4 to about 10 r.p.m., and the lifting velocity to about 3mm/60min, and a compd. semiconductor crystal having about 50mm diameter and about 10cm length is formed.
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