| 摘要 |
PURPOSE:To obtain a method to form a uniform Al alloy wiring on a semiconductor substrate, by including a working process for forming an aluminum alloy film on the semiconductor substrate, a working process for cooling rapidly the semiconductor substrate from a high temperature, and a process for etching and eliminating the alloy film by a photolithography art. CONSTITUTION:A silicon substrate 1 covered with a silicon oxide film 2 is heated, and an Al-Cu alloy film 3 is formed by a sputtering method. At this time, Cu is almost uniformly distributed in the Al-Cu alloy film 3. After the Al-Cu alloy film 3 with a desired thickness is formed, the heating is immediately interrupted, and by making liquid nitrogen flow into a substrate holder, the whole part of the silicon substrate 1 is rapidly cooled up to the room temperature. In the course of the process, the distribution of Cu in the Al-Cu alloy film 3 does not change from the distribution at 400 deg.C because of rapid cooling, and the distribution of Cu in the Al-Cu alloy film 3 is almost uniform. Then, by applying an usual lithography are, the Al-Cu alloy film 3 except a necessary part is etched and eliminated, and an Al-Cu alloy wiring 4 is formed. Thereby, admixture also is etched and eliminated at the same time, and the Al-Cu alloy wiring can be easily formed.
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