| 摘要 |
PURPOSE:To prevent a device from an erroneous action even when it is irradiated with radiation by a method wherein the device is structured in such a manner that a conductor is embedded in a field insulating film and a negative potential is applied to the conductor. CONSTITUTION:A device has such a structure where a conductor 7 is embedded in a field insulating film 6 and a negative potential V0 is applied to the conductor 7. Thereby, even when an electron-hole pair occurs due to radiation and a hole is trapped by the field insulating film 7 to produce positive charge, the conductor 7 absorbs the positive charge so that the field insulating film 6 has no charge at any time, and under the insulating film 6 no n-inversion takes place. Thus a very highly reliable IC can be obtained which is prevented from an erroneous action and operates accurately all the time even when it is irradiated with radiation.
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