| 摘要 |
<p>PURPOSE:To prevent a metallic material from diffusing in a contact layer as well as an off current from changing due to annealing process by a method wherein a drain electrode and a second electrode are laminated-layer structured comprising a metallic layer, an insulating thin film and a contact layer. CONSTITUTION:In order to restrain an off current from being increased by metallic diffusion, a very thin insulating film layer (film thickness of 1-5nm) 7 is provided between ohmic electrodes of an n<+> layer 4 and a metallic layer 5 to prevent a metal from diffusing in the n<+>Si layer 4. As for such a metallic diffusion preventive layer, an insulating layer with high diffusion preventive capacity such as SiN, PSG etc., is used. Through these procedures, a stable off current regardless of annealing temperature can be supplied to be reduced by around three figures compared with any conventional type after annealing process at 300 deg.C so that the characteristics of a liquid crystal driving thin film transistor may be improved.</p> |
