发明名称 MOCVD DEVICE FOR PREPARING THIN FILM OF HIGH-TEMPERATURE SUPERCONDUCTOR
摘要 PURPOSE:To produce a thin film of a high-temp. superconductor while preventing explosion and early reaction except on a substrate by subjecting an introducing pipe for a gaseous org. metal compd. and the inside wall of a reaction tube to high-temp. heating and mixing this gas with an oxygen-contg. gas just before the substrate. CONSTITUTION:Plural inert gases (He, Ar, N2, etc.) are introduced through a flow meter 1 into a cylinder 2 for the org. metal compd. and the gaseous org. metal compd. [La(C5H5)3, Ba(OCOCH3)2, Cu(acac)2] is supplied through the introducing pipe 4 into the reaction tube 5. A heater 3 is provided to the cylinder 2 at this time and the introducing pipe 4 and the reaction tube 5 are heated by a heater 8 to prevent the condensation of the gaseous org. metal compd. to the inside wall of the pipe and tube. On the other hand, the oxygen- contg. gas is discharged onto the substrate 7 through a guiding pipe 6 and is mixed with the gaseous org. metal compd. only when said gas arrives just before (about 10-20cm) the heated substrate 7. The thin film of the high-temp. superconductor is thereby formed on the substrate 7 without generating the explosion and the early reaction except on the substrate.
申请公布号 JPS63307275(A) 申请公布日期 1988.12.14
申请号 JP19870139966 申请日期 1987.06.05
申请人 KAWASAKI STEEL CORP 发明人 TAKAHASHI MAKOTO
分类号 B01J19/12;C23C16/40;C23C16/44;C23C16/455;C30B29/22;H01B13/00;H01L39/12;H01L39/24 主分类号 B01J19/12
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