| 摘要 |
PURPOSE:To obtain a high output by disordering part of an active layer multiplex quantum well structure formed by altering the thickness of a barrier layer to form a region having a convex lens effect perpendicularly to a substrate surface near a laser light irradiating end face. CONSTITUTION:A P-type AlxGa1-xAs (x=0.45) clad layer 12, an active layer 13, an N-type AlxGa1-xAs (x=0.45) clad layer 14, an N-type GaAs layer 15 for obtaining an ohmic contact are sequentially formed on a P-type GaAs substrate 11. The layer 13 is formed in a multiplex quantum structure in which many GaAs well layers 16 and many AlxGa1-xAs (x=0.3) barrier layers 7 are alternately laminated. Then, a Zn diffused layer 18 is formed on the rear section of the laser light radiating end face from the layer 15 to the layers 14, 12. An insulating film 19 is formed on the layer 15, and an N-type electrode 20 is further formed by ohmic contact. On the other hand, a P-type electrode 21 is formed on the rear of the substrate 11. |
