(A) ;VAPOR PHASE EPITAXIAL GROWTH METHOD OF 3-V COMPOUND SEMICONDUCTOR USING INDIUM, TO WHICH IRON IS DOPED, AS BASE,申请号JP19870082241U-传众专利搜索

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发明名称	(A) ;VAPOR PHASE EPITAXIAL GROWTH METHOD OF 3-V COMPOUND SEMICONDUCTOR USING INDIUM, TO WHICH IRON IS DOPED, AS BASE
摘要
申请公布号	JPS63193897(U)	申请公布日期	1988.12.14
申请号	JP19870082241U	申请日期	1987.05.30
申请人		发明人
分类号	F28F3/02;H05K7/20;(IPC1-7):H05K7/20	主分类号	F28F3/02
代理机构		代理人
主权项
地址

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