发明名称 APPARATUS AND METHOD OF PLASMA PROCESSING
摘要 PURPOSE:To generate a high density plasma by a low radio frequency power and carry out a high speed plasma processing by a method wherein gas for treating samples is depressurized and excited by an electric field applied between 1st electrodes and a 2nd electrode and a magnetic field induced by an electromagnet in a vacuum chamber. CONSTITUTION:First electrodes 2A and 2B are provided outside a vacuum chamter 1 in which samples 7 are placed and a 2nd electrode 3 facing the 1st electrodes 2A and 2B is provided inside the chamber 1. An electromagnet 4 is also provided outside the chamber 1. Gas for treating the samples 7 is depressurized and excited in the chamber 1 by an electric field applied between the 1st electrodes 2A and 2B and the 2nd electrode 3 and a magnetic field induced by the electromagnet 4. An AC voltage is applied to the electrodes 2A and 2B and a DC voltage is applied to the electrode 3 or the electrode 3 is grounded. With this constitution, a higher density plasma is generated by a lower radio frequency power and a high speed plasma processing can be carried out.
申请公布号 JPS63306629(A) 申请公布日期 1988.12.14
申请号 JP19870141373 申请日期 1987.06.08
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HIRAO TAKASHI
分类号 H01L21/302;H01L21/3065 主分类号 H01L21/302
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