| 摘要 |
PURPOSE:To provide a semiconductor integrated circuit having good flatness and high density, by limiting a distance between lead-out electrode patterns formed from a conducting film of polycrystalline silicon or the like to a value smaller than a predetermined value, and filling narrow grooves created by the patterning of the conducting film with an insulating material or with a thin film through an insulating film. CONSTITUTION:When a conducting film is patterned, a distance between patterns thereof is limited to a value smaller than a predetermined thickness of the film. Since gaps between the patterns are filled with an insulating film or a thin film through an insulating film (i.e. dummy patterns), the surface of an element can be flattened. The distance between the conducting film patterns or between the conducting film and the thin film (i.e. width of grooves) is set at a value three or more times as small as the thickness of the conducting film (i.e. depth of the grooves). In this manner, projection or recess on the surface of the element, for example caused by projection or recess in an underlying interconnection of aluminum or the like can be increased substantially and, hence, disconnection or short-circuit of the interconnection can be avoided. Accordingly, it is possible to provide an integrated circuit having improved reliability with improved yield.
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