| 摘要 |
PURPOSE:To obtain an SOI substrate with an Si layer brought to approximately a non-dislocation state by previously molding only a section required for shaping a semiconductor element insularly before the starting of a heat treatment process when the SOI substrate is formed by using ion implantation and heat treatment. CONSTITUTION:When a buried type insulator layer 6 is shaped into a semiconductor substrate 2 by employing ion implantation and heat treatment after ion implantation, at least a semiconductor-element forming region is previously molded selectively insularly before said heat treatment. When oxygen ions 4 are implanted to the (100) surface 2a of the Si substrate 2 in specified dosage by acceleration energy of 180keV, the SiO2 layer 6 is buried into the Si substrate, a large quantity of oxygen 10 remains in a surface Si layer 8, and dislocation 12 is generated. Excess sections are removed through etching, leaving the regions 14 required for shaping a semiconductor element. When an atmosphere in which O2 is mixed into Ar is employed and heat treatment at 1250 deg.C is executed, oxygen is not left in Si islands 3, and dislocation density is brought close to approximately zero.
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