| 摘要 |
PURPOSE:To perform a high speed operation by forming a thin film transistor of silicon, such as Pd<+> and silicide, ion implanting metal to become a Schottky junction, and then annealing it at a low temperature, thereby reducing the resistances of source, drain. CONSTITUTION:A thin polycrystalline silicon film 2 is deposited, for example, on a Pyrex glass substrate 1, and patterned. Then, a silicon oxide film 2 which becomes a gate insulating film is deposited. Thereafter, after a polycrystalline silicon film 4 is deposited, a silicon oxide film 5 is deposted thereon. Then, a gate electrode is formed. Subsequently, <104.6>Pd<+> is, for example, implanted. After an SiO2 6 is deposited, it is annealed at a low temperature in an N2 atmosphere, and the Pd becomes Pd2Si. Then, it is annealed, for example, in a hydrogen atmosphere. Thereafter, contact holes 7, 8 are opened in source, drain SD regions, and an AlSi film is deposited. Thereafter, source, drain wirings 9, 10 are formed. Eventually, it is annealed, for example, in a hydrogen atmosphere to complete it. |
