发明名称 Solid-state image sensor
摘要 In a solid-state image sensor of the type consisting of a semiconductor circuit substrate capable of charge transfer or having the switching function and a photoconductive layer or a photosensor, a pattern of light-shielding checks is formed between the surface of the semiconductor circuit substrate and a transparent electrode on the photoconductive layer or a photosensor so as to optically shield the gaps or spaces between electrodes which are provided for respective picture elements and which are connected to their associated diode regions and the photoconductive layer or photosensor, whereby blooming can be suppressed without causing a decrease in sensitivity.
申请公布号 US4789888(A) 申请公布日期 1988.12.06
申请号 US19810249498 申请日期 1981.03.31
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 MIYATA, YUTAKA;CHIKAMURA, TAKAO;SHIBATA, TAKUO;FUJIWARA, SHINJI
分类号 H01L27/146;(IPC1-7):H01L27/14 主分类号 H01L27/146
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