| 摘要 |
PURPOSE:To selectively form a protective film only on the resonator end face of a laser array by forming between the semiconductor lasers a partition of semiconductor longer than the resonator length of the semiconductor lasers, thereby to shield part of the particles beam of the protective film having a strong directivity. CONSTITUTION:Between two semiconductor lasers in addition to two pairs of resonator surfaces, a projecting partition 19 of semiconductor which is longer than the resonator length by 45mum is formed. By the inlination of the axis of a laser wafer 10 by about 60 deg. relative to a particles beam 43, the partition 19 shields part of the particles beam of Al2O3, whereby an Al2O3 protective film is formed only on one edge of a pair of lasers. If a wafer 10 is fixed to a sample stand 42 having a rotation mechanism, by rotating the sample stand 42 for each vapor deposition, a protective film is selectively formed without breaking the vacuum. With this, a protective film is selectively formed only on the resonator end face of a laser array.
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