发明名称 FORMATION OF THIN FILM
摘要 PURPOSE:To prevent the poor purity or compsn. of the thin film on a substrate by forming a target material having an outside dimension larger than the outside dimension of a target mounting plate. CONSTITUTION:A high voltage is impressed between the target mounting plate 3 and the peripheral electrode 5 from a high-frequency or DC power supply 6 to ionize the inert or reactive gas around the target material 1 and to drive out the target material 1 which is a raw material, by which a thin film is formed on the substrate 7. The target material 1 is formed to an outside dimension slightly larger than the outside dimension of the adhesive surface to the mounting plate 3, by which the effect of preventing the sputtering of the mounting plate 3 or a bonding material 2 and the large shielding effect even in the case when said plate or material is sputtered are obtd. The thin film formed on the substrate 7 is, therefore, only the target material 1 which is the raw material or the mixture with the raw material, and the intrusion of impurities (the bonding material 2 and the mounting plate 3) therein is prevented.
申请公布号 JPS63297554(A) 申请公布日期 1988.12.05
申请号 JP19870133875 申请日期 1987.05.29
申请人 SEIKO EPSON CORP 发明人 NAKAMICHI TADAHIRO
分类号 H01L21/203;C23C14/34 主分类号 H01L21/203
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