| 摘要 |
PURPOSE:To eliminate completely a sliding part to improve reliability by providing a resistance type potential divider and semiconductor switching means, which are connected to connection points of it respectively, in the same semiconductor. CONSTITUTION:P<->-type well region 14 for forming plural N channel-type MOS transistors is formed in N<->-type Si substrate 13 by diffusion, and N<+>-type regions 15 and 16 and gate region 17 which is placed in the position between these regions are formed in region 14. Next, P<+>-type regins 18 and 19 for forming a P channel-type MOS transistor are formed in the position distant from region 14 by diffusion, and gate region 22 is provided between them. In this constitution, region 19 is used commonly as resistance type potential divider 24, and contact electrodes 26, 29 and 30 are fitted to region 19 while insulating them from one another by SiO2 film 21 and are connected to terminals 6, 3 and 4. Then, regions 16 and 18 are connected by electrode 20 and are connected to leading-out terminal 9, and gates 17 and 22 are connected through diode 12 and are led out to terminal 8. |
