| 摘要 |
PURPOSE:To attain linear output characteristic in a gate controlling voltage by a method wherein a source region and/or a drain region are provided with wedge-shaped sides facing each other. CONSTITUTION:In an n-type silicon semiconductor substrate 1, a p-type drain region 2 and p-type source region 3 are produced by boron diffusion. The sides of the drain region 2 and source region 3 facing each other are formed into wedges 2b and 3b, and a channel region is formed between the two pointed ends of the wedges 2b and 3b. With either or both of the sides of the drain region 2 and source region 3 facing each other being tapered, field concentration and diffusion current injection effects are attained. In this way, a drain output current capable of linear change relative to the gate voltage can be obtained.
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