| 摘要 |
PURPOSE:To enable a high-speed operation by a method wherein a specified thickness is retained of a silicon oxide film just on a polycrystalline silicon layer to be converted into a gate and this process is followed by a process wherein steps are taken so that the gate may not be affected by impurity to be implanted into a source and drain for a reduction in gate electrode resistance. CONSTITUTION:The thickness of a silicon oxide film 1 remaining on a gate electrode 5 will be so designed that n-type and p-type impurity ions to be implanted in the next process will hardly reach the gate electrode 5. It follows therefore that, in the implantation process of the n-type and p-type impurity ions for the formation of a source and drain regions just after the gate pattern formation process, the ions will be prevented from landing into the gate polycrystalline silicon 5. In this way, the gate is protected from impurity ions that may otherwise cause an complementary increase in its resistance. The silicon oxide film 4 will not be an obstacle in a hydrogenation process because hydrogen penetrates it easily, which allows a gate film to be formed thick. In this way, side walls may be formed, which contributes to an increase in the element operating speed. |
