| 摘要 |
PURPOSE:To prevent fluorine from coming out of an EL film as well as to aim at improvement in a luminance characteristic by performing heat treatment on the EL film in a sulfur fluoride atmosphere. CONSTITUTION:A transparent electrode 2 consisting of ITO and an insulating layer (SiON) 3 are formed each on a glass substrate 1 by means of a sputtering process, then a luminous layer (EL film ZnS:TbFx) 4 are formed by means of a binary sputtering process using a ZbS target and a mixed sintered target between TbF3 and Tb2S3. Afterward, they are subjected to heat treatment in an atomosphere containing SF4, SF6 and S2F2 or their mixed gases. With this constitution, fluorine is preventable from coming out of the luminous layer, thus an intensity improvement is made attainable.
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