| 摘要 |
<p>A negative polymer resist material, used as the top layer of a multi-layer resist structure for patterning microelectronic devices, is formed as a copolymer of a silicon-containing alkyl methacrylate having a trimethylsiloxysilyl group, and a halogenated styrene. The polymer resist material is typically applied as a top layer (18) overlying a thicker organic polymer bottom layer (16), and a pattern is formed in the polymer resist top layer (18) by irradiating the surface, as with electron beam irradiation. The portion of the top layer (18) that is not irradiated is removed by developing the polymer resist material. The polymer resist material is particularly resistant to subsequent removal by oxygen reactive ion etching, a dry etching process that is desirably used to remove those portions of the organic polymer bottom layer (16) which are not masked by the top layer.</p> |
