发明名称 |
SEMICONDUCTOR DEVICE COMPRISING A METALLIC CONDUCTOR |
摘要 |
<p>A material having metallic conduction (hereinafter referred to as a "metallic material" is heteroepitaxially grown in the laminar form on an insulating substrate (11) by molecular beam epitaxy. The resulting metallic material layer (12) is shaped in a desired pattern, whenever necessary. At least a semiconductor layer (13) is heteroepitaxially grown on the metallic material layer (12) and a semiconductor device is fabricated using the semiconductor layer (13). In this case, the metallic material layer (12) is used as one of the electrodes of the semiconductor device.</p> |
申请公布号 |
DE3279167(D1) |
申请公布日期 |
1988.12.01 |
申请号 |
DE19823279167 |
申请日期 |
1982.11.22 |
申请人 |
HITACHI, LTD. |
发明人 |
NAKAGAWA, KIYOKAZU;MURAYAMA, YOSHIMASA;SHIRAKI, YASUHIRO |
分类号 |
H01L29/80;H01L21/203;H01L21/205;H01L21/28;H01L21/331;H01L21/335;H01L21/60;H01L29/73;H01L29/861;(IPC1-7):H01L21/28 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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