A SEMICONDUCTOR DEVICE, MAKING AND TESTING THEREOF

摘要

A semiconductor device operating in a high frequency range is in structure capable of facilitating a quick high frequency characteristic test in high accuracy. A semiconductor substrate (1) is provided on its major surface with an input electrode pad (2a) and an output electrode pad (2b) to be connected with integrated circuits included in the semiconductor substrate (1) respectively, while grounding electrode pads (2c) are formed on both sides of the input and output electrode pads (2a, 2b) respectively to sandwich the same. The grounding electrode pads (2c) ground the semiconductor substrate (1) in a high frequency characteristic test. The input electrode pad (2a) and the grounding electrode pads (2c) on both sides thereof as well as the output electrode pad (2b) and the grounding electrode pads (2c) on both sides thereof are positioned to be in contact with a probing needle of a well-known high frequency wafer probe.