| 摘要 |
PURPOSE:To reduce a temperature coefficient, and to manufacture a Zener diode having high reliability and giving stable constant voltage by forming a plurality of p-n junctions onto one main surface of a semiconductor substrate and connecting a plurality of p-n junctions in series by conductors. CONSTITUTION:Three p-n junctions consisting of an n-region 13a and a p<+> region 14a, an n-region 13b and a p<+> region 14b and an n-region 13c and a p<+> region 14c are shaped onto one p-type Si substrate 10. An insulating film 16 is formed onto the whole surface of the p-type Si substrate 10, and the insulating films 16 in desired regions are removed to shape contact holes. An Al-Si layer 17 is formed onto the p-type Si substrate 10 including the contact holes, the Al-Si layer 17 is left so as to connect an n<+> region 15a and the p<+> region 14c, the p<+> region 14a and an n<+> region 15b and the p<+> region 14b and an n<+> region 15c, and the remainders are gotten rid of, thus connecting the three p-n junctions in series. Accordingly, the three p-n junctions are connected in series, and breakdown strength thereof is trebled, thus approximately trebling a temperature coefficient.
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