PLASMA ETCHING PROCESS FOR MOS CIRCUIT PREGATE ETCHING UTILIZING MULTI-STEP POWER REDUCTION RECIPE,申请号GB19880024757-传众专利搜索

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发明名称	PLASMA ETCHING PROCESS FOR MOS CIRCUIT PREGATE ETCHING UTILIZING MULTI-STEP POWER REDUCTION RECIPE
摘要
申请公布号	GB8824757(D0)	申请公布日期	1988.11.30
申请号	GB19880024757	申请日期	1988.10.21
申请人	INTEL CORPORATION	发明人
分类号	H01L21/302;H01L21/3065;H01L21/311;H01L21/8247;H01L29/788;H01L29/792;(IPC1-7):H01L21/306	主分类号	H01L21/302
代理机构		代理人
主权项
地址

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