| 摘要 |
PURPOSE:To improve the uniformity of the potential in a p-type well in a plane and to align the characteristics for blooming and smear, by arranging a p<+> region, whose resistance is lower than that in a p-type region, within a the p-type diffused region and the region other than a photodiode part so as to form a linear pattern. CONSTITUTION:A p<+> region 11 is provided in an outer frame, which is provided so as to surround a light receiving part 6 and a vertical transfer part 7, and in an approximately window shaped pattern, which is arranged in the outer frame and two bars that are extended in the horizontal direction so as to cross the light receiving part 6 and the vertical transfer part 7. A p-well region 10 is brought into contact with a region other than the light receiving part 6 and the vertical transfer part 7. The region 10 is biased at OV. A p<+> region 11, whose resistance is lower than that in the p-type well, is arranged so as to form a linear pattern. Thus deopletion in the p-type well is uniformly provided. The characteristics for blooming and smear can be aligned.
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