发明名称 PRODUCTION OF SILICON CARBIDE WHISKER
摘要 PURPOSE:To shorten time for converting materials to SiC whisker, by thinly feeding a mixture of silicon source raw material and carbon source raw material on a graphite sheet continuously circulating in a heat insulating oven and then continuously passing the mixture on the graphite sheet through a high temperature reaction area kept to nonoxidative atmosphere. CONSTITUTION:A mixture of silicon source raw material and carbon source raw material is thinly fed on a graphite sheet continuously circulated as conveyor belt. Then the mixture is continuously passed into high temperature reaction area kept to nonoxidative atmosphere. In the above-mentioned method, the thickness of the raw materials on the graphite sheet is formed so as to satisfy the equation expressed by V/S<=0.75(cm) (V is volume and S is heat transfer area) and temperature of high reaction area is 1,500-1,700 deg.C and maintaining time is 1-30min. The applied silicon raw material includes silica sand, silica gel or chaff ash and the carbon source raw material includes carbon black, graphite powder or coke powder.
申请公布号 JPS63291900(A) 申请公布日期 1988.11.29
申请号 JP19870125952 申请日期 1987.05.25
申请人 TOKAI CARBON CO LTD 发明人 KIDA TORU;KATSUMATA TAKESHI;MACHIDA OSAMU
分类号 C30B29/62 主分类号 C30B29/62
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