发明名称 READ-ONLY MEMORY CIRCUIT
摘要 <p>PURPOSE:To minimize the number of contact windows in a memory cell by providing a circuit which selects the inversion or the non-inversion of output in an inside part. CONSTITUTION:The inversion/non-inversion selection circuit 3 possess a selecting signal output terminal 31 and an inversion/non-inversion circuit 4 inversely or non-inversely outputs the content of the output data of a sense amplifier 2 added to a data input terminal 41 to an output terminal 43 by a control signal added to a selection control terminal 42 from the circuit 3. Then the circuit 4 is connected to be decided it's inverse and non-inverse operation by the circuit 3. That means, when many binary number zero exist in the data, the data is non-inversely programmed in the memory cell 1 and the data is non-inversely outputted at the time of read. The circuit 3 is programmed to inversely program the data in the memory cell 1 and to inversely program the data in the memory cell 1 and to inversely output the data at the time of read when many binary number 1 exist in the data. Thus by an simple circuit, the number of the contact windows in the memory cell can be minimized.</p>
申请公布号 JPS63291292(A) 申请公布日期 1988.11.29
申请号 JP19870124306 申请日期 1987.05.21
申请人 MATSUSHITA ELECTRONICS CORP 发明人 KATAOKA SUKEHARU
分类号 G11C17/00;G11C16/02 主分类号 G11C17/00
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