| 摘要 |
PURPOSE:To implement various functions such as bistable operation with respect to a light emitting output or the intensity of transmitted light, by providing laminated bodies of barrier layers, whose thickness has a specified value, and InwGa1-wAs layers. CONSTITUTION:An InyGazAl1-y-zAs barrier layer 3 (0.2<y+z<0.8) has a thickness from 40(y+z)Angstrom or more and 100(y+z)Angstrom or less. An InwGa1-wAs layer (0.2<w<0.8) 4 is provided. The barrier layers 3 and the layers 4 are laminated, and the laminated bodies, whose period is a number greater than the integer part of 10(y+z), are provided. When the materials and the structure such as these are used, a tunnel effect is liable to occur since the effective mass in the InAlAs barrier layer is small. The thickness is thicker than that in the case of an ordinary multiple-quantum-well laser. The number of the quantum wells is many. Therefore, a negative resistance characteristic is obtained since the coupling between the quantum wells is disengaged by the application of a voltage. |
