| 摘要 |
PURPOSE:To obtain a semiconductor porcelain element capable of obtaining a good result in such electrical characteristics as specific permittivity, electrical loss tangent, volume resistivity by a method wherein a composition consisting of Bi2O3 and V2O5 in a specified ratio of composition is used as a diffusion substance which is diffused thermally in the grain boundary of semiconductor porcelain. CONSTITUTION:In a semiconductor porcelain element with an insulating layer formed by thermally diffusing a diffusion substance in the grain boundary of semiconductor porcelain, a composition consisting of 80-95 mol % of Bi2O3 and 20-5 mol % of V2O5 is used as the above diffusion substance. For example, Nb2O5 and SiO2 are each added to SrTiO3 within a range of 0.1-2 mol % and the mixture is pressed and molded in a discal form after being mixed sufficiently. After this, the molded material is fired within a temperature range of 1420-1500 deg.C in an atmosphere consisting of 1a-15 % of hydrogen and 99-85 % of nitrogen to manufacture semiconductor porcelain. Then, a mixture of Bi2O3 and V2O5 in the above ratio is applied on one surface of the semiconductor porcelain and the porcelain is heated at 1100-1300 deg.C to diffuse thermally a diffusion substance in its grain boundary. Lastly, a silver paste is printed on both surfaces of a semiconductor porcelain element obtained in the above way and is baked at 800 deg.C or thereabouts to use the element as a silver electrode. |
