| 摘要 |
PURPOSE:To obtain a high performance field effect transistor stable in its performance, by forming an active layer, which is made of one conductivity-type compound semiconductor and has thickness of a specific value or below, and forming an opposite conductivity-type compound semiconductor layer in touch with one surface of the active layer. CONSTITUTION:There are formed an active layer 2, which is made of one conductivity-type compound semiconductor and has thickness of 500Angstrom or below, and an opposite conductivity-type compound semiconductor layer 7 in touch with one surface of the active layer 2. For example, a p-type GaAs burial layer 7 doped with Be in the degree of 10<17>cm<-3> is made to grow epitaxially on a semi-insulating GaAs substrate 3 by the use of a MBE method. A GaAs active layer 2 doped with Si in such a high carrier concentration as 1 to 5X10<18>cm<-3> is made to grow 30 to 1000Angstrom in thickness on the layer 7. Next WSi is used to form a gate electrode 6 of 0.3 mum in its gate length, and ohmic electrodes 4, 5 are formed on both sides of the gate electrode 6, so that a field-effect transistor is manufactured.
|
