| 摘要 |
<p>PURPOSE:To realize a high-speed response without deteriorating the resolving power of a position by a method wherein a second semiconductor layer is constituted by a number of linear semiconductor layers which cross at right angles mutually. CONSTITUTION:A p-type semiconductor resistance layer 2 is formed on an n-type high-resistance semiconductor substrate 1; electrodes 3, 4 are formed on the p-type semiconductor resistance layer. In addition, the p-type semiconductor resistance layer is parallel to directions of the electrodes 3 and 4; one high-resistance stripe 21 and a number of low-resistance stripes 22 crossing at a right angle to the stripe 21 are formed; the stripe 21 and the stripes 22 are connected electrically. Accordingly, when the light is incident, a photoproduction charge generated at an incident position reaches the stripe 21 via the low-resistance stripes 22 as a photoelectric current which is proportional to the incident energy of the light. The photoelectric current is divided in such a way that it is inversely proportional to a resistance value from an arrival point at the stripe 21 to the electrodes 3 and 4; it can be taken out from the electrodes 3 and 4 as an output. By this setup, it is possible to respond to a high-speed modulated light source at high speed without deteriorating the resolving power of a position.</p> |
