| 摘要 |
PURPOSE:To uniformize surface coarseness in a position in the vicinity of the center of a wafer with that in a position in the vicinity of the outer periphery of a wafer, by a method wherein a grinding stone is cut in the wafer with specified pressurization and the grinding streak in the wafer is formed in a concentric shape or approximately in a concentric shape by increasing the number of revolutions of the wafer over that of a grinding stone. CONSTITUTION:Since grinding resistance is normally specified by constant pressurization cutting, saddleform warp is prevented from occurring and grinding precision is excellent, and damage on a wafer 26 is low. By increasing the number of revolutions of the wafer 26 over that or the grinding stone 5 right before return backward movement of a grinding cycle, the grinding streak in the wafer 26 is formed in a concentric shape or approximately in a concentric shape. This method uniformizes surface coarseness of the wafer 26, resulting in prevention of the occurrence of unevenness in bending strength when the water produces chips, and improvement of bending strength.
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