| 摘要 |
PURPOSE:To render small enough the thickness of a lower-layer resist film and to improve on resolution by a method wherein a negative-type resist film after pre-baking at a low temperature is subjected to an energy beam while being heated for conversion into an insoluble lower-layer resist film in a process of forming a pattern by using a multilayer resist film. CONSTITUTION:After application of a negative-type resist to a substrate 1, pre-baking is accomplished at a low temperature for the formation of a negative-type resist film 3, the negative-type resist film 3 is then exposed to an energy beam while being heated to 60 deg.C higher for, conversion into a lower-layer resist film 31 that is insoluble. Next, on said lower-layer resist film 31, at least an upper-layer resist film 5 is formed, and exposure to light, and development, are accomplished through the multilayer resist film consisting of the films 31 and 5. For example, a negative-type resist film 3 is formed on an aluminum-copper film 2 on a substrate 1 and then pre-baking is accomplished at 130 deg.C. A process follows wherein the negative-type resist film 3 is exposed to ultraviolet rays while being heated at 80 deg.C for conversion into an insoluble lower-layer resist film 31. Thereon, an intermediate-layer film 4 and an upper-layer resist film 5 are formed. The films 5, 4, 31, and 2 are subjected to patterning, in that order. |
