| 摘要 |
PURPOSE:To lower loss voltage in a saturation region, by employing epitaxial type transistor structure which is capable of reducing series resistance applied toward collector side. CONSTITUTION:In a circumferential section of an N type high specific resistance epitaxial layer 2 consisting of a part of a collector region, a region 9 having an extremely low specific resistance and the same electric conduction type as the collector region (epitaxial layer) is formed in the position kept away from outside surface of a P type base region by a distance l equal to thickness of an epitaxial layer 8. And, when impurities contained in the region 9 and a silicon substrate 1 are cut away by high temperature of laser, redispersion takes place to form along surface of the laser cut groove a layer 11 whose resistance is extremely low. |
