| 摘要 |
PURPOSE:To form source and drain electrodes in a symmetrical pattern with respect to a gate electrode and to make the profile of the gate electrode excellent, by utilizing the hardened part of resist, which is cured with ultraviolet rays, and forming the gate electrode in a self-alignment manner. CONSTITUTION:Positive type photoresist 2 is applied on a substrate 1 by spin coating. An SOG film 3 is formed thereon, and a resist pattern 4 is formed. With the pattern 4 as a mask, the film 3 is patterned by RIE and the like. Then, the pattern 4 is removed. With the pattern of the SOG film 3 as a mask, the pattern of the resist 2 is formed. Then source/drain metal 5 is evaporated. The pattern of the film 3 is removed by the treatment with fluoric acid. The entire surface is cured with UV, and a surface layer 2a of the resist 2 is hardened. After the layer 2a is etched to a specified level, an inside 2b of the resist 2, which is not hardened yet, is dissolved. After gate metal 6 is evaporated, the surface layer 2a is removed. Then, source and drain electrodes and a gate electrode 6 are formed.
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