发明名称 MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT
摘要 PURPOSE:To obtain an element having a low threshold value of current, excellent in temperature characteristics and transient characteristics, having a long life, by providing a substrate with groove parts or projection parts at the intervals equal to the length of a resonator of the element and making each layer grow by a molecular beam epitaxial (MBE) method. CONSTITUTION:One surface of a substrate 1 provided with plurality of groove parts 2 at the intervals L1 equal to the length of a resonator. The surface provided with the grooves 2 is stuck to a substrate holder with In. Then, a clad layer 11, an active layer 12, a clad layer 13 and a cap layer 4 are made to grow by turns on the surface on the opposite side by an MBE method. At this time, the parts of the grooves 2 are filled with In so as to have large thermal conductivity and the growth is performed at a higher temperature than the set substrate temperature. Accordingly, the growth layer of some part of the groove parts 2 becomes thinner than the other parts so as to have a window structure. An element, which cleaves perpendicularly to the grown surface at the central part of these grooves 2, and has a window structure on an end surface together with a high output and a long life, is obtained.
申请公布号 JPS63287081(A) 申请公布日期 1988.11.24
申请号 JP19870121667 申请日期 1987.05.19
申请人 SHARP CORP 发明人 TAKAHASHI KOUSEI;SUYAMA NAOHIRO;KONDO MASAFUMI;HAYAKAWA TOSHIRO
分类号 H01S5/00 主分类号 H01S5/00
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