| 摘要 |
PURPOSE:To enable formation of pattern images having high sensitivity and high definition by subjecting a single resist layer on a substrate to pattern irradiation by radiations, then subjecting the irradiated part to a graft polymn. with an adequate monomer and bringing the same into reaction further with another adequate monomer and executing a developing operation. CONSTITUTION:The single resist layer 2 coated on the substrate 1 is subjected to the pattern irradiation by the radiations or light 4 and thereafter, the active points in the irradiated part 5 are subjected to the graft polymn. with the monomer 6 having high radial reactivity and at least one functional group, by which the sensitivity of the resist layer 2 is greatly improved. This graft-polymer layer 7 is brought into reaction further with the monomer 8 different from the monomer 6 having the easy reactivity with the functional group, by which the difference in the developing speed between the reactive layer 9 and the unirradiated region of the resist layer 2 is expanded. The unirradiated region of the resist layer is then removed by the wet development or dry development by which the fine patterns having the extremely high dimensional accuracy is obtd. |
