| 摘要 |
PURPOSE:To shape self-alignment structure simply by the small number of processes by conducting the formation of an insulating film and etching through an ECR plasma method. CONSTITUTION:A photoresist film 5 is applied onto a semiconductor substrate 1, to which an active layer 3 is shaped previously through ion implantation, through a first insulating film 4, and openings 8S, 8D are formed to the photoresist film in source and drain forming regions through patterning. Ions such as silicon ions are implanted through the openings 8S, 8D, and a source region 9S and a drain region 9D are shaped into the semiconductor substrate 1. A second insulating film 26 is formed through an ECR plasma method. Likewise, the plasma shower of oxygen (O2) is poured from the oblique direction by using the ECR plasma method. Consequently, the semiconductor substrate 1 is exposed on the bases of the openings 8S, 8D. Likewise, a third insulating film 30 consisting of SiN is shaped by employing the ECR plasma method. Accordingly, a MESFET having self-alignment structure is formed.
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