| 摘要 |
PURPOSE:To reduce a gate trigger current by isolating a base region at a second main electrode side into two regions, and isolating between the isolating region for isolating them and the base region having a second emitter region, the second main electrode by an insulating film. CONSTITUTION:First and second p-type second base regions 31, 32 isolated by n-type regions 1a, 1b are formed on the second main surface of an n-type semiconductor substrate 1. An n-type second emitter region 5 is formed in the region 31. Further, when a positive voltage is applied to a first main electrode 7, a negative voltage is applied to an electrode 9, and a negative potential is applied to a gate electrode 9 to the electrode 7, since the region 31 is not brought directly into contact with the electrode 9, holes are not directly absorbed to the electrode 9, but a junction between the regions 31 and 5 is forward biased. As a result, it is conducted only by implanting small amount of holes. When a positive voltage is applied to the electrode 8 with respect to the electrode 7, the junction between the regions 31 and 5 is directly forward biased, thereby reducing a gate trigger current.
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