发明名称 ROTARY COATER FOR SEMICONDUCTOR
摘要 PURPOSE:To form a resist film uniform in thickness by a method wherein a flow controlling panel is horizontally provided under slits in the inner wall of an annular cylinder. CONSTITUTION:A resist liquid (a) is allowed to drop out of a nozzle 5 onto a wafer 1 in rotation at a constant speed, when the resist liquid (a) spreads owing to the centrifugal force toward the circumference of the wafer 1 for the formation of a resist film. Upon activation of a pump through a pipe 14, air is introduced into a vessel 20 through a hole 26 in a ceiling 23 and then slits 27, for the creation of an air current C. Resist spray (b) from the circumference of the wafer 1 after impinging at an inclined panel 24 is converted into a mist (c), to be carried downward on the air current C. The slits 27 are so small in width that the mist (c) is prevented from coming back to the wafer 1 in the presence of an air current B generated by the rotating wafer 1 flowing into the slits 27. A flow controlling panel 28 deflects sideways the air coming into the vessel 20, which protects the wafer 1 from a disturbed boundary layer. In this design, a boundary layer may be uniform over the wafer 1, which results in a resist film uniform in thickness.
申请公布号 JPS63283131(A) 申请公布日期 1988.11.21
申请号 JP19870118579 申请日期 1987.05.15
申请人 HITACHI LTD 发明人 TSUZUKI KOICHI;HOSHINO MASAKAZU;IINO TOSHIYOSHI
分类号 B05C11/08;G03F7/16;H01L21/027;H01L21/30 主分类号 B05C11/08
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