| 摘要 |
<p>Photovoltaic device using a semiconductor based on hydrogenated amorphous silicon, formed by adding hydrogen to silicon, as photo-active layer 3b. The ratio of the number of silicon atoms being bound to hydrogen atoms to the total number of silicon atoms is less than or equal to 1 %, and the oscillating bond of silicon atoms is less than or equal to 1 x 10<17> cm<-3>. The advantages of the invention are that the cost may be reduced, by formation of a thinner layer and by obtaining a greater surface area of photo-active layer and that the photoelectric-conversion yield is improved, which also prevents photodeterioration. <IMAGE></p> |
