| 摘要 |
PURPOSE:To eliminate a need for a patterning operation of only an amorphous semiconductor layer by a method wherein a second electrode is separated from its low-resistance part by patterning only a second electrode layer. CONSTITUTION:When a series connection of a block cell constituted by first electrode layers 21-24 composed of transparent conductive thin films on an insulating substrate 1, by an amorphous Si(a-Si) layer 30 and by a second electrode layer 40 is to be cut at the second electrode layer 40 and at the amorphous semiconductor layer 30 by using laser beams 5, it is cut via parts near each cutting face 6 of the a-Si layer 30 whose resistance value has become low due to the crystallization of a-Si by a high-temperature heating operation or due to the generation of crystalline Si containing a molten metal; second electrodes 41-44 are separated from the low resistance parts by a patterning operation of only the second electrode layer 40.
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