| 摘要 |
PURPOSE:To reduce a size of a MIS transistor and to make an operating speed faster by forming a contact hole in a self-aligned manner. CONSTITUTION:Device isolation films 12 and an active device region surrounded by these films are formed on the surface of a p-type semiconductor substrate 11; after that, a gate insulating film 14 is formed on the surface of this active device region by a thermal oxidation method. After that, a gate polysilicon layer 15 and a first interlayer insulating film 16 are formed on the film. Then, second device isolation films 19 are formed to be thick on the surface of the active device region outside the parts covered with anti-oxidizing side walls 18. After that, first contact holes 20 are made in a self-aligned manner with reference to the first interlayer insulating film 16 and the second device isolation films 19. Source-drain polysilicon layers 21 are formed on the holes. After that, second interlayer insulating films 22 are formed on the whole surface; then, source-drain diffusion layers 23 are formed. Furthermore, second contact holes 24 are formed, and wiring metal layers 25 are formed thereon.
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