SCHOTTKY DIODE - POLYCRYSTALLINE SILICON RESISTOR MEMORY CELL

摘要

A programmable integrated circuit structure useful for fabricating integrated circuit memory cells and a method of fabricating the cells are disclosed. The programmable structure includes a serially connected Schottky diode and a resistor formed by a region of intrinsic polycrystalline silicon. The resistance of the resistor is irreversably changeable by application of a suitably high threshold voltage. Application of such a voltage changes the characteristics of the resistor permanently, thereby providing a means for the storage of information.