| 摘要 |
PURPOSE:To enhance an exposure accuracy while the throughput of an EB exposure is maintained by selecting large or small field in response to a large or small pattern size. CONSTITUTION:A small field 13 is used for a small pattern 11, and a large field 14 is used for a large pattern 12. It is determined on the basis of the size, shape and array of the patterns at each mask to employ the large pattern when it exceeds any size. For example, whether one pattern has an uneven part or not is discriminated to judge whether the pattern size of the uneven part is, if it has the uneven part (Yes), 10mum or less or not. In case of the Yes, the field size is reduced only in the section having the uneven part. If it is judged that one pattern do not have the uneven part (No), whether the pattern size is 10mum or less or not is discriminated, and the field size is, if Yes, reduced. In case of the No, the field size is increased, and the field 14 is used.
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