发明名称 |
A PROCESS FOR MAKING AN OHMIC CONTACT TO AN N-TYPE CONDUCTIVITY GROUP III-V SEMICONDUCTOR COMPOUND AND A SEMICONDUCTOR DEVICE HAVING SUCH AN OHMIC CONTACT |
摘要 |
An ohmic contact is made to an n-type Group III-V semiconductor compound (eg gallium arsenide) by vapour depositing germanium (3) and a refractory metal (4) selected from the group consisting of molybdenum, tungsten and tantalum on to the substrate and sintering the substrate in a reducing atmosphere for a time and at a temperature sufficient to form the first-to-form germanide of the refractory metal. The resulting ohmic contact includes an interface region of germanium heavily doped with the Group V element disposed between a region of the Group III to V compound doped with germanium and the layer of germanide. |
申请公布号 |
DE3474610(D1) |
申请公布日期 |
1988.11.17 |
申请号 |
DE19843474610 |
申请日期 |
1984.06.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
RUPPRECHT, HANS STEPHAN;TIWARI, SANDIP |
分类号 |
H01L29/43;H01L21/28;H01L21/285;H01L29/45;(IPC1-7):H01L21/285;H01L21/40 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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