发明名称 CRACKING PROCESS OF SEMICONDUCTOR CHIP
摘要 <p>PURPOSE:To cause cracking to be achieved without the breakage of an air bridge part by a method in which the soft elastic plate such as a rubber plate, etc., and the rigid elastic plate such as a phosphor bronze plate, etc., are lapped and developed into flat surface, and thereon the semiconductor wafer to which scribing has been applied, is placed, and then semiconductor chip is cracked by rolling a roller on said wafer. CONSTITUTION:The soft elastic plate 1 such as a thick rubber plate, etc., has e.g. about 10mm thickness and the rigid elastic plate 2 such as phosphor bronze plate, etc., has e.g. about 0.1mm thickness. These two plates are lapped and developed into flat surface. The cracks 31 formed by scribing are made on the semiconductor wafer 3 to which scribing has been applied. When a roller is rolled, the rigid elastic plate 2 such as phosphor bronze plate, etc., is deflected, whereby the force is applied to only the edge 33 of semiconductor chip 32. Since the force is not applied to its central part 34, cracking is achieved without the breakage of an air bridge part and the risk such as the breakage of semiconductor element.</p>
申请公布号 JPS63278804(A) 申请公布日期 1988.11.16
申请号 JP19870113923 申请日期 1987.05.11
申请人 FUJITSU LTD 发明人 YAMADA HIROYOSHI
分类号 B28D5/00;H01L21/301 主分类号 B28D5/00
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