| 摘要 |
PURPOSE:To easily analyze a malfunction by opening a hole in an insulating film at the top of interconnections to be connected by a focused ion beam, exposing wirings, irradiating a focused laser light or an ion beam in metal compound gas, and forming wirings by metal precipitated in the hole. CONSTITUTION:An insulating film 3 (SiO2, etc.) is formed on a substrate 4 (Si, etc.), wirings (aluminum, etc.) 2a-2c are formed thereon, and a protective film (SiO2, Si3N4, etc.) 1 is formed on the uppermost part. When wirings 2a, 2c are to be electrically connected, holes 5a, 5c are opened in the film 1 above the wirings 2a, 2c, by a focused ion beam, and the part 6a of the wirings 2a and the part 6c of the wirings 2c are exposed. Thereafter, metal wirings 7 are formed in a direction for connecting the holes 5a, 5c by an ion beam induction CVD technique or laser induction CVD technique. Thus, the wirings 2a, 2c are connected through the wirings 7. Accordingly, an IC can be debugged, corrected or its defect can be analyzed. |
