| 摘要 |
PURPOSE:To eliminate the steps of coating and baking an intermediate layer and to simply perform the steps by providing a silicon resin layer as a flattened layer on base steps, and forming a photoresist layer thereon. CONSTITUTION:A wiring layer is coated with silicone resin to flatten a base and to prevent the layer from reflecting, and to convert the surface of the resin into SiO2. Irradiation of an ultraviolet ray, O2 plasma processing etc., are effective for this. After it is coated with photoresist 4, a pattern is formed by normal exposure and development, and then the surface layer converted to the SiO2 and an inner lower layer silicon resin are etched by dry etching (O2+CF4 plasma). The SiO2 section of the upper layer becomes a mask at this time. Thus, it can prevent the shape from deteriorating due to random reflection from the base steps to form an ideal photoresist pattern and to simplify the steps. |
