| 摘要 |
PURPOSE:To monitor the flatness of the surface of a semiconductor device highly accurately and easily by a method wherein flatness test patterns are formed on a semiconductor wafer and the flatness after a flattening process is measured quantitatively with the test patterns. CONSTITUTION:After a wafer is subjected to a flattening process, the wafer is set and aligned with an alignment mark 1 as a reference. Then, an electron beam is applied to a flatness test mark 2 and signal levels based upon reflected electrons and secondary electrons are detected to measure the difference in level of the mark 2 and the flatness is judged. Then a stepping process is performed and the wafer is transferred and the other flatness test mark 2 is scanned by the electron beam. By the scanning, the flatness at the 2nd test mark 2 is tested. When the alignment is performed by an electron beam, the electron beam scanning of the alignment mark and the electron beam scanning of the flatness test mark may be performed simultaneously.
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