| 摘要 |
PURPOSE:To reduce a memory cell forming area by reading information from an information accumulation part out to an information read part via a capacitor. CONSTITUTION:When a prescribed current IOFF is made flow through an offset line, and currents IX, IY in the negative direction are made flow through a magnetic flux control line 4 to read information from an information accumulation part 5 of a memory cell, if '1' is written in a Josephson junction device J6, the memory cell switches and goes to a potentialized state temporarily. Accordingly, a current pulse is made flow through the information read part 6 via the capacitors C1, C2, and a sense gate is switched to a temporarily potentialized state. When '0' is written in the device J6, the current pulse does not flow through the part 6. In such constitution information is read by detecting the presence/absence of the current through the capacitors, the memory function is securely achieved even when the information accumulation part and the information read part are formed with a single junction quantum interferometer and a single junction Josephson device, as a result, the memory cell forming area can be reduced.
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